[21a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

[21a-141-3] Annealing Temperature Dependence of Stacking Fault contraction in 4H-SiC

〇Yoshifumi Yamashita¹, Akagi Katsuyuki¹, Takeshi Nishikawa¹, Masaki Hada¹, Yasuhiko Hayashi¹ (1.Okayama Univ.)

Keywords:4H-SiC, Shockley-type stacking fault, partial dislocation motion

We performed experiments where we expand Shockley stacking fault (SSF) in 4H-SiC by electron beam irradiation using SEM probe beam and then shrink it by heat treatment. The shrinking velocity showed rapid slowing down and SSF stopped shrinking at a certain size. The activation energy was determined from the temperature dependence of the initial velocity of contraction, which was 0.7 eV. This is considered to be the migration energy of kink motion on the 30°Si (g) partial dislocation.