Oral presentation

[20a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 20, 2018 9:00 AM - 12:30 PM 141 (141+142)

Katsuhiro Kutsuki(Toyota Central R&D Labs.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[20a-141-1] [Young Scientist Presentation Award Speech] Impact of Gate Oxide Thickness and/or Post-oxidation Nitridation Treatment

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Hiroyuki Amishiro¹, Hiroshi Watanabe¹, Koji Kita², Naruhisa Miura¹ (1.Mitsubishi Electric Corp., 2.University of Tokyo)

9:15 AM - 9:30 AM

[20a-141-2] Effect of NO post-oxidation annealing on Hall effect mobility of 4H-SiC(0001) MOSFET fabricated on low-doping concentration substrate

〇Mitsuru Sometani¹, Takuji Hosoi², Tetsuo Hatakeyama¹, Shinsuke Harada¹, Hiroshi Yano³, Takayoshi Shimura², Heiji Watanabe², Yoshiyuki Yonezawa¹, Hajime Okumura¹ (1.AIST, 2.Osaka Univ., 3.Univ. of Tsukuba)

9:30 AM - 9:45 AM

[20a-141-3] Insight into performance enhancement of SiC MOSFET by Ba incorporation into SiO₂/SiC interface

Eigo Fujita¹, 〇Takuji Hosoi¹, Mitsuru Sometani², Tetsuo Hatakeyama², Shinsuke Harada², Hiroshi Yano³, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST, 3.U. Tsukuba)

9:45 AM - 10:00 AM

▲ [20a-141-4] Effects of wet-POA with various conditions on 4H-SiC m-face MOS interface properties

〇(M1)Qiao Chu¹, Kensaku Yamamoto², Sumera Shimizu², Koji Kita¹ (1.The Univ. of Tokyo, 2.DENSO CORP.)

10:00 AM - 10:15 AM

△ [20a-141-5] Improvement of interface properties of Al₂O₃/SiC by post oxygen radical treatment

〇Takuma Doi^1,2, Wakana Takeuchi³, Mitsuo Sakashita¹, Shigehisa Shibayama¹, Noriyuki Taoka², Osamu Nakatsuka^1,4, Shigeaki Zaima⁵ (1.Nagoya Univ., 2.AIST-NU GaN-OIL, 3.AIT, 4.IMaSS, Nagoya Univ., 5.IIFS, Nagoya Univ.)

10:15 AM - 10:30 AM

△ [20a-141-6] Estimation of interface state density in heavily-doped SiC MOS structures from gate characteristics of MOSFETs

〇Koji Ito¹, Takuma Kobayashi¹, Masahiro Horita¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

10:30 AM - 10:45 AM

△ [20a-141-7] 400°C operation of normally-off n- and p-JFETs with a side-gate structure fabricated by ion implantation into a high-purity semi-insulating SiC substrate

〇(M1)Masashi Nakajima¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

11:00 AM - 11:15 AM

[20a-141-8] The “P_bC” dangling-bond center at 4H-SiC(0001)/SiO₂ interfaces studied by electron-spin-resonance (ESR) spectroscopy

〇Takahide Umeda¹, Kouhei Kaminarita¹, Takafumi Okuda², Tsunemasa Kimoto², Mitsuru Sometani³, Shinsuke Harada³ (1.Univ. of Tsukuba, 2.Kyoto Univ., 3.AIST)

11:15 AM - 11:30 AM

[20a-141-9] Electrically detected magnetic resonance study on a carbon dangling bond at (000-1)4H-SiC/SiO₂ interface

〇Yohei Kagoyama¹, Mitsuru Sometani², Shinsuke Harada², Tetsuo Hatakeyama², Takahide Umeda¹ (1.Tsukuba Univ., 2.AIST)

11:30 AM - 11:45 AM

[20a-141-10] Evaluation of SiO₂/SiC interface using a Laser Terahertz Emission Microscope

〇Tatsuhiko Nishimura¹, Hidetoshi Nakanishi¹, Iwao Kawayama², Masayoshi Tonouchi², Takuji Hosoi³, Takayoshi Shimura³, Heiji Watanabe³ (1.SCREEN, 2.ILE, Osaka Univ., 3.Graduate School of Eng., Osaka Univ.)

11:45 AM - 12:00 PM

[20a-141-11] The Effect of NO Annealing on Electrical Stress Tolerance of SiO₂ / SiC

〇Genki Kikkawa¹, Hasunuma Ryu¹ (1.Tsukuba Univ.)

12:00 PM - 12:15 PM

[20a-141-12] Effects of surface etching with CF₄ on 4H-SiC nMOSFETs

〇Kiichi Kobayakawa¹, Kosuke Muraoka¹, Hiroshi Sezaki^1,2, Seiji Ishikawa^1,2, Tomonori Maeda^1,2, Shin-Ichiro Kuroki¹ (1.RNBS., 2.Phenitec Smicon. Co.)

12:15 PM - 12:30 PM

[20a-141-13] Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs

〇Tomoyasu Ishii¹, Shin-Ichiro Kuroki¹, Hiroshi Sezaki², Seiji Ishikawa², Tomonori Maeda², Takahiro Makino³, Takeshi Ohshima³, Mikael Ostling⁴, Carl-Mikael Zetterling⁴ (1.Hiroshima Univ. RNBS, 2.Phenitec, 3.QST, 4.KTH)

Oral presentation

[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 20, 2018 1:45 PM - 6:00 PM 221C (2Ｆ_Lounge1)

Shin-Ichiro Kuroki(Hiroshima Univ.), Kazuma Eto(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[20p-221C-1] Investigation on Al diffusion and sheet resistance of Al-implanted and laser-irradiated 4H-SiC

〇(M2)Shogo Muto¹, Akihiro Ikeda², Hiroshi Ikenoue¹, Tanemasa Asano¹ (1.Kyushu Univ., 2.Sojo Univ.)

2:00 PM - 2:15 PM

[20p-221C-2] Millisecond Annealing for High Speed Activation of Impurity in 4H-SiC Wafer by Nitrogen-boosted Atmospheric Pressure Thermal Plasma Jet

〇(M1)Seiki Kawasaki¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Universiy. ADSM)

2:15 PM - 2:30 PM

[20p-221C-3] Investigation on Contact Characteristics of n-type 4H-SiC with Silicon-Cap-Annealing

〇(M1)Daichi Todo¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

2:30 PM - 2:45 PM

△ [20p-221C-4] Formation of low resistivity contact on p-type of 4H-SiC using laser doping

〇(M2)Kento Okamoto¹, Kikuchi Toshifumi¹, Ikeda Akihiro², Ikenoue Hiroshi¹, Asano Tanemasa¹ (1.Kyushu Univ., 2.Sojo Univ.)

2:45 PM - 3:00 PM

[20p-221C-5] Performance improvement of 3C-SiC photoelectrodes by surface area expansion

〇(M2)Tomohiro Ambe¹, Masashi Kato¹ (1.Nagoya Inst.)

3:15 PM - 3:30 PM

[20p-221C-6] Effect of the shape of SiC solute source on grown crystals in solution growth of SiC using Cr solvent

〇Kouki Suzuki¹, Toshinori Taishi¹ (1.Shinshu Univ. (Eng.))

3:30 PM - 3:45 PM

▲ [20p-221C-7] High quality and inclusion suppression by switching flow in 3-inch SiC solution growth

〇Can Zhu¹, Tomoki Endo¹, Shunta Harada¹, Miho Tagawa¹, Toru Ujihara^1,2 (1.Nagoya Univ., 2.AIST)

3:45 PM - 4:00 PM

[20p-221C-8] Dislocation Characteristics of SiC Single Crystal Substrates Investigated by Means of Bright-Field X-ray Topography under Multiple-Diffraction Conditions

〇Haruka Kamamoto¹, Yu Fujita¹, Hiroyuki Mizuochi¹, Yoshiyuki Tsusaka^1,2, Junji Matsui² (1.Grad. Sch. of Material Sci.Univ. of Hyogo, 2.Syn. Rad. Nano-Tech. Center, Univ. of Hyogo)

4:00 PM - 4:15 PM

[20p-221C-9] Visualization of influence of parameters in solution growth of SiC using machine learning of thermo-fluid analysis

〇Kentaro Kutsukake¹, Yosuke Tsunooka^2,3,5, Keiichi Osada^2,3, Keisuke Ando^2,3, Hongyi Lin^2,3, Can Zhu^2,3, Taka Narumi^2,4, Shunta Harada^2,3, Miho Tagawa^2,3, Toru Ujihara^2,3,5 (1.Inst. Innov. Fut. Soc., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Grad. Eng., Nagoya Univ., 4.VBL, Nagoya Univ., 5.AIST GaN-OIL)

4:15 PM - 4:30 PM

△ [20p-221C-10] Exploration of condition for grinding SiC by Beyesian optimization

〇(M1)Keichi Osada^1,2, Yosuke Tsunooka^1,2,3, Kiyoshi Narita⁴, Koizumi Haruhiko^1,2, Kentaro Kutsukake⁵, Harada Shunta^1,2, Miho Tagawa^1,2, Toru Ujihara^1,2,3 (1.Grad. Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.AIST GaN-OIL, 4.Nitolex Corp., 5.Inst. Innov. Fut. Soc., Nagoya Univ.)

4:45 PM - 5:00 PM

[20p-221C-11] Improvement of etching rate profile of 4H-SiC wafer by using ClF₃ gas

Syogo Okuyama¹, 〇Ryohei Kawasaki¹, Kurashima Keisuke¹, Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama Nat. Univ., 2.Kanto Denka Kogyo Co., Ltd, 3.AIST)

5:00 PM - 5:15 PM

[20p-221C-12] Development of SiC Epitaxial Reactor Cleaning Process Using Chlorine Trifluoride Gas -Evaluation of Purified Pyrolytic Carbon as Susceptor Coating Material-

〇Keisuke Kurashima¹, Hitoshi Habuka¹, Hideki Ito², Shinichi Mitani², Yoshinao Takahashi³ (1.Yokohama Nat. Univ., 2.NuFlare Technologies, 3.Kanto Denka Kogyo)

5:15 PM - 5:30 PM

[20p-221C-13] Quartz surface coating by Y₂O₃ film for SiC epitaxial reactor cleaning using ClF₃ gas

Ryohei Kawasaki¹, Yasuhiro Umetsu², Keisuke Kurashima¹, Kohei Shioda¹, Asumi Hirooka¹, 〇Hitoshi Habuka¹ (1.Yokohama Nat. Univ., 2.Techno-Quartz, Inc.,)

5:30 PM - 5:45 PM

[20p-221C-14] Corrosion resistance of AlN to chlorine trifluoride gas for SiC etching

〇Miyu Haruguchi¹, Ryohei Kawasaki¹, Hitoshi Habuka¹, Takahashi Yoshinao² (1.Yokohama Nat. Univ, 2.Kanto Denka Kogyo)

5:45 PM - 6:00 PM

[20p-221C-15] Epitaxial growth of 3C-SiC on Si substrate by chemical vapor deposition with vinylsilane single precursor

〇Kentaro Hashimoto¹, Takuma Doi¹, Wakana Takeuchi^1,2, Osamu Nakatuka^1,3, Shigeaki Zaima⁴ (1.Grad., Sch. of Eng. Nagoya Univ., 2.Aichi Inst. of Technol., 3.IMaSS, Nagoya Univ., 4.IIFS Nagoya Univ.)

Oral presentation

[21a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 21, 2018 9:00 AM - 12:30 PM 141 (141+142)

Kazutoshi Kojima(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[21a-141-1] [Young Scientist Presentation Award Speech] Reaction Pathway Analysis for Conversion of Screw Basal Plane Dislocation to Threading Edge Dislocation in 4H-SiC

〇Yohei Tamura¹, Hiroki Sakakima², Asuka Hatano², Satoshi Izumi² (1.Fujifilm Corp., 2.Univ. of Tokyo)

9:15 AM - 9:30 AM

[21a-141-2] Partial Dislocation Analysis by Photoluminescence Imaging and Spectroscopy in 4H-SiC Epitaxial Layers

〇Johji Nishio¹, Mitsuhiro Kushibe¹, Aoi Okada¹, Chiharu Ota¹ (1.Toshiba Corp.)

9:30 AM - 9:45 AM

[21a-141-3] Annealing Temperature Dependence of Stacking Fault contraction in 4H-SiC

〇Yoshifumi Yamashita¹, Akagi Katsuyuki¹, Takeshi Nishikawa¹, Masaki Hada¹, Yasuhiko Hayashi¹ (1.Okayama Univ.)

9:45 AM - 10:00 AM

[21a-141-4] Surface recombination velocities for the Si- and C-faces of 4H-SiC: re-examination through experimental and analytical accuracy improvements

〇Masashi Kato¹, Xinchi Zhang¹, Kimihiro Kohama¹, Masaya Ichimura¹ (1.NITech)

10:00 AM - 10:15 AM

[21a-141-5] Depth-resolved carrier lifetime measurements in 4H-SiC thick epitaxial layers

〇(M1)Takashi Hirayama¹, Mitsuhiro Kushibe², Akira Miyasaka^3,4, Kazutoshi Kojima⁴, Tomohisa Kato⁴, Hajime Okumura⁴, Masashi Kato¹ (1.NITech, 2.TOSHIBA, 3.Showa Denko, 4.AIST)

10:15 AM - 10:30 AM

△ [21a-141-6] Theoretical Analysis of Donor Density Dependence of Carrier Lifetimes in SiC and Comparison with Experiment

〇Shoma Yamashita¹, Takafumi Okuda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

10:45 AM - 11:00 AM

[21a-141-7] Control of minority carrier lifetime of p-type 4H-SiC epitaxial layer by V doping

〇Koichi Murata¹, Takeshi Tawara^2,3, Anli Yang¹, Tetsuya Miyazawa¹, Hidekazu Tsuchida¹ (1.CRIEPI, 2.AIST, 3.Fuji Electric Co.)

11:00 AM - 11:15 AM

▲ [21a-141-8] Time-resolved Photoluminescence Spectral Analysis of B-related Luminescence in
N+B doped n-type 4H-SiC Epilayers

〇Anli Yang¹, Tetsuya Miyazawa¹, Takeshi Tawara^2,3, Koichi Murata¹, Hidekazu Tsuchida¹ (1.CRIEPI, 2.AIST, 3.Fuji Electric Co., Ltd.)

11:15 AM - 11:30 AM

[21a-141-9] Phonon-assisted optical absorption due to the Franz-Keldysh effect
in a 4H-SiC p-n junction diode under high reverse bias voltage

〇Takuya Maeda¹, Xilun Chi¹, Masahiro Horita¹, Jun Suda^1,2, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Nagoya Univ.)

11:30 AM - 11:45 AM

[21a-141-10] Influence of proton beam writing on optical properties of silicon vacancy introduced in SiC pn junction diodes

〇Yuichi Yamazaki¹, Yoji Chiba^1,2, Takahiro Makino¹, Shin-ichiro Sato¹, Naoto Yamada¹, Takahiro Satoh¹, Yasuto Hijikata², Kazutoshi Kojima³, Sang-Yun Lee⁴, Takeshi Ohshima¹ (1.QST, 2.Saitama Univ., 3.AIST, 4.KIST)

11:45 AM - 12:00 PM

[21a-141-11] Optically Detected Magnetic Resonance Measurements of Silicon Vacancy Created in SiC pn Junction Diodes by Proton Beam Writing

〇(M1)Yoji Chiba^1,2, Yuichi Yamazaki², Takahiro Makino², Shin-ichiro Sato², Naoto Yamada², Takahiro Satoh², Kazutoshi Kojima³, Yasuto Hijikata¹, Takeshi Ohshina² (1.Saitama Univ., 2.QST, 3.AIST)

12:00 PM - 12:15 PM

[21a-141-12] Study on Luminescence Properties of Single Photon Sources in SiC p⁺nn⁺ Diodes

〇(M2)Hiroki Tsunemi^1,2, Shin-ichiro Sato², Yuichi Yamazaki², Takahiro Makino², Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama univ., 2.QST)

12:15 PM - 12:30 PM

[21a-141-13] Low-temperature photoluminescence characteristics of single-photon sources formed on the SiC semiconductor surface

〇Shunsuke Otojima¹, Yuichiro Matsushita², Takeshi Ohshima³, Yasuto Hijikata¹ (1.Saitama Univ., 2.Tokyo Tech., 3.QST)

Poster presentation

[21p-PB6-1~10] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 21, 2018 1:30 PM - 3:30 PM PB (Shirotori Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[21p-PB6-1] Angle-resolved Photoelectron Spectroscopy studies of initial stage of thermal oxidation on 4H-SiC (0001) on-Axis, 4° Off-Axis Substrates ２

Mayu Kuwabara¹, Ryosuke Sano¹, Hitoshi Arai¹, Yasuhisa Sano², 〇Hiroshi Nohira¹ (1.Tokyo City Univ., 2.Osaka Univ.)

1:30 PM - 3:30 PM

[21p-PB6-2] Construction of 4H-SiC/SiO2 interface models on a- and m-faces by first-principles calculations

Tomoaki Kaneko¹, Nobuo Tajima¹, Takahiro Yamasaki¹, 〇Jun Nara¹, Tatsuo Schimizu², Koichi Kato³, Takahisa Ohno¹ (1.NIMS, 2.Toshiba R&D., 3.IIS, Univ. of Tokyo)

1:30 PM - 3:30 PM

△ [21p-PB6-3] Theoretical study of strain-induced modulation of the bandgap in SiC

〇(DC)Kenta Chokawa¹, Kenji Shiraishi^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

1:30 PM - 3:30 PM

[21p-PB6-4] A study of distribution of residual stress on n-type 4H-SiC in contact with an electrode by micro-Raman imaging and ab-initio calculations

〇Jun Suda¹, Satoshi Suwa¹, Kouki Togo¹, Shugo Mizuno¹ (1.Chukyo Univ.)

1:30 PM - 3:30 PM

[21p-PB6-5] Direct bonding of SOI-Si/4H-SiC and photodiode formation

〇Fumiaki Hasebe¹, Tatsuya Meguro¹, Takahiro Makino², Takeshi Ohshima², Yasunori Tanaka³, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ., 2.QST, 3.AIST)

1:30 PM - 3:30 PM

[21p-PB6-6] SOI-Si/4H-SiC pixel devices for radiation hardened image sensors

〇Tatsuya Meguro¹, Hasebe Fumiaki¹, Makino Takahiro², Takeshi Ohshima², Yasunori Tanaka³, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ., 2.QST, 3.AIST)

1:30 PM - 3:30 PM

[21p-PB6-7] Effect of gamma-rays irradiation on electrical characteristics of 4H-SiC JFET

〇Akinori Takeyama¹, Keigo Shimizu², Takahiro Makino¹, Yuichi Yamazaki¹, Takeshi Ohshima¹, Shin-ichiro Kuroki³, Yasunori Tanaka² (1.QST, 2.AIST, 3.RNBS,Hiroshima Univ.)

1:30 PM - 3:30 PM

▲ [21p-PB6-8] Low Specific Contact Resistance TiNb Ohmic Contacts to 4H-SiC with Laser Annealing for Harsh Environment Applications

〇(D)Cuong Van Vuong¹, Teruhisa Kawasaki², Shin-Ichiro Kuroki¹ (1.Hiroshima Univ. RNBS, 2.Sumitomo Heavy Industries Ltd.)

1:30 PM - 3:30 PM

[21p-PB6-9] Structural analysis of interfacial dislocations and expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

〇SHOHEI HAYASHI^1,2, Tamotsu Yamashita^1,3, Masaki Miyazato^1,4, Masaaki Miyajima^1,4, Junji Senzaki¹, Tomohisa Kato¹, Yoshiyuki Yonezawa¹, Kazutoshi Kojima¹, Hajime Okumura¹ (1.AIST, 2.TRC, 3.SHOWA DENKO, 4.Fuji Electric)

1:30 PM - 3:30 PM

[21p-PB6-10] Improvement of Drain-Source Current Leakage by Formation of a High Temperature Ion Implantation Mask of SiC Trench MOSFET Device without Dry Etching Process

〇Kazunari Kawamoto¹, Yusuke Kobayashi¹, Takenori Fujiwara², Toru Okazawa², Makoto Hayasaka², Naoyuki Oose³, Shinsuke Harada¹, Hajime Okumura¹ (1.AIST, 2.Toray, 3.Fuji Electric)

Sessions

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

▲ [20a-141-4] Effects of wet-POA with various conditions on 4H-SiC m-face MOS interface properties

△ [20a-141-5] Improvement of interface properties of Al2O3/SiC by post oxygen radical treatment

△ [20a-141-6] Estimation of interface state density in heavily-doped SiC MOS structures from gate characteristics of MOSFETs

△ [20a-141-7] 400°C operation of normally-off n- and p-JFETs with a side-gate structure fabricated by ion implantation into a high-purity semi-insulating SiC substrate

[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

△ [20p-221C-4] Formation of low resistivity contact on p-type of 4H-SiC using laser doping

▲ [20p-221C-7] High quality and inclusion suppression by switching flow in 3-inch SiC solution growth

△ [20p-221C-10] Exploration of condition for grinding SiC by Beyesian optimization

[21a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

△ [21a-141-6] Theoretical Analysis of Donor Density Dependence of Carrier Lifetimes in SiC and Comparison with Experiment

▲ [21a-141-8] Time-resolved Photoluminescence Spectral Analysis of B-related Luminescence inN+B doped n-type 4H-SiC Epilayers

[21p-PB6-1~10] 15.6 Group IV Compound Semiconductors (SiC)

△ [21p-PB6-3] Theoretical study of strain-induced modulation of the bandgap in SiC

▲ [21p-PB6-8] Low Specific Contact Resistance TiNb Ohmic Contacts to 4H-SiC with Laser Annealing for Harsh Environment Applications

Authentication

△ [20a-141-5] Improvement of interface properties of Al₂O₃/SiC by post oxygen radical treatment

▲ [21a-141-8] Time-resolved Photoluminescence Spectral Analysis of B-related Luminescence in
N+B doped n-type 4H-SiC Epilayers