The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 20, 2018 1:45 PM - 6:00 PM 221C (2F_Lounge1)

Shin-Ichiro Kuroki(Hiroshima Univ.), Kazuma Eto(AIST)

5:15 PM - 5:30 PM

[20p-221C-13] Quartz surface coating by Y2O3 film for SiC epitaxial reactor cleaning using ClF3 gas

Ryohei Kawasaki1, Yasuhiro Umetsu2, Keisuke Kurashima1, Kohei Shioda1, Asumi Hirooka1, 〇Hitoshi Habuka1 (1.Yokohama Nat. Univ., 2.Techno-Quartz, Inc.,)

Keywords:ClF3 gas, Y2O3, Coating film

Anti-corrosive nature of Y2O3 film to ClF3 gas was evaluated, when Y2O3 was used for coating quartz glass surface.