[21p-PB6-1~10] 15.6 Group IV Compound Semiconductors (SiC)

[21p-PB6-10] Improvement of Drain-Source Current Leakage by Formation of a High Temperature Ion Implantation Mask of SiC Trench MOSFET Device without Dry Etching Process

〇Kazunari Kawamoto¹, Yusuke Kobayashi¹, Takenori Fujiwara², Toru Okazawa², Makoto Hayasaka², Naoyuki Oose³, Shinsuke Harada¹, Hajime Okumura¹ (1.AIST, 2.Toray, 3.Fuji Electric)

Keywords:silicon carbide, trench MOSFET, heat-resistant photoresist

Drain-Source current leakage was improved by having changed the high-temperature ion implantation mask formation of the SiC trench MOSFET device from the conventional dry etching process to the non-dry etching process using the heat-resistant photoresist.We estimate that the etching damage that was observed on the SiC wafer surface in the dry etching process has a serious influence on Drain-Source current leakage.