[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-11] Improvement of etching rate profile of 4H-SiC wafer by using ClF₃ gas

Syogo Okuyama¹, 〇Ryohei Kawasaki¹, Kurashima Keisuke¹, Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama Nat. Univ., 2.Kanto Denka Kogyo Co., Ltd, 3.AIST)

Keywords:ClF3 gas, Etching rate

In the previous research, in order to etch the SiC wafer quickly, we fabricated a equipment that etches SiC wafer with a diameter of 50 mm using chlorine trifluoride (ClF ₃ ) gas and verified. In this research, we redesigned the gas distributer in the equipment and tried to improve the etching rate profile of the single crystal 4H-SiC wafer.