[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-8] Dislocation Characteristics of SiC Single Crystal Substrates Investigated by Means of Bright-Field X-ray Topography under Multiple-Diffraction Conditions

〇Haruka Kamamoto¹, Yu Fujita¹, Hiroyuki Mizuochi¹, Yoshiyuki Tsusaka^1,2, Junji Matsui² (1.Grad. Sch. of Material Sci.Univ. of Hyogo, 2.Syn. Rad. Nano-Tech. Center, Univ. of Hyogo)

Keywords:SiC, dislocation, X-ray topography

Characteristics of dislocations in commercially available SiC substrates have been investigated by means of bright-field X-ray topography under multiple-diffraction conditions. Topography experiments are performed at SPring-8 BL24XU B2 hutch by the use of X-rays with 15 keV energy. Burgers vectors of b = a₁, a₂, a₃ are identified using topographs taken with diffractions of g = m₁, -m₂, -m₃, respectively.Three dislocation lines meet at a point with a Burgers vector relation of a₁+a₂+a₃ = 0.