[21p-PB6-1~10] 15.6 Group IV Compound Semiconductors (SiC)

[21p-PB6-1] Angle-resolved Photoelectron Spectroscopy studies of initial stage of thermal oxidation on 4H-SiC (0001) on-Axis, 4° Off-Axis Substrates ２

Mayu Kuwabara¹, Ryosuke Sano¹, Hitoshi Arai¹, Yasuhisa Sano², 〇Hiroshi Nohira¹ (1.Tokyo City Univ., 2.Osaka Univ.)

Keywords:SiO2/Si, AR-XPS

The initial stage of thermal oxidation on 4H-SiC (0001) on-Axis, 4° Off-Axis Substrates were investigated using angle-resolved X - ray photoelectron spectroscopy (AR - XPS). As a result, it was observed that in both substrates, the amount of Si³⁺ was maximized at an oxide film thickness of about 0.9 nm, decreased thereafter, the amount of Si³⁺ was minimal at an oxide film thickness of about 1.1 nm , and then increased again.