[21p-PB6-1~10] 15.6 Group IV Compound Semiconductors (SiC)

[21p-PB6-5] Direct bonding of SOI-Si/4H-SiC and photodiode formation

〇Fumiaki Hasebe¹, Tatsuya Meguro¹, Takahiro Makino², Takeshi Ohshima², Yasunori Tanaka³, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ., 2.QST, 3.AIST)

Keywords:SiC, bonding, image sensor

Silicon carbide (SiC) which has wide energy-band is one of the candidate for base semiconductor material for the harsh environment electronics. Radiation-hardened image sensors have been required for decommisioning neclear power station, e.g., for Fukushima Daiichi nuclear power station, Japan. SiC transistors have strong radiation hardness, however SiC do not have enough absorbance for visible light as a photodiode, due to its wide bandgap. If it is possible to combine advantages of SiC transistors and Si diodes, we can obtain radiation hardened image sensors. In this work, 4H-SiC and Silicon-on-Insulator (SOI) substrates were bonded sucessfully, and with this bonded substrate, Si photodiodes (PD) on 4H-SiC were fabricated and demonstrated.