[21a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

▲ [21a-141-8] Time-resolved Photoluminescence Spectral Analysis of B-related Luminescence in
N+B doped n-type 4H-SiC Epilayers

〇Anli Yang¹, Tetsuya Miyazawa¹, Takeshi Tawara^2,3, Koichi Murata¹, Hidekazu Tsuchida¹ (1.CRIEPI, 2.AIST, 3.Fuji Electric Co., Ltd.)

Keywords:SiC, characterization, Time-resolved photoluminescence spectra

To understand the complicated carrier recombination mechanism in N+B-doped n-type 4H-SiC epilayers and clarify the B-related luminescence mechanism, temperature-dependent time-resolved photoluminescence (TRPL) measurements were performed to clarify the roles of two overlapped phonon-assisted N donor-D center acceptor pairs (DAP) and free-to-D center (e-A) emissions.