[20a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

[20a-141-13] Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs

〇Tomoyasu Ishii¹, Shin-Ichiro Kuroki¹, Hiroshi Sezaki², Seiji Ishikawa², Tomonori Maeda², Takahiro Makino³, Takeshi Ohshima³, Mikael Ostling⁴, Carl-Mikael Zetterling⁴ (1.Hiroshima Univ. RNBS, 2.Phenitec, 3.QST, 4.KTH)

Keywords:SiC, Short-Channel Effects