[20a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

[20a-141-8] The “P_bC” dangling-bond center at 4H-SiC(0001)/SiO₂ interfaces studied by electron-spin-resonance (ESR) spectroscopy

〇Takahide Umeda¹, Kouhei Kaminarita¹, Takafumi Okuda², Tsunemasa Kimoto², Mitsuru Sometani³, Shinsuke Harada³ (1.Univ. of Tsukuba, 2.Kyoto Univ., 3.AIST)

Keywords:4H-SiC, MOS interface defect, ESR

Thermal oxidation of 4H-SiC(0001) face (the so-called Si-face) generates "interface carbon defects" with a density of 2-4×10¹² cm^-2, which has been recently revealed by our electron-spin-resonance (ESR) spectroscopy. These defects act as deep electron traps, reducing the amount of mobile electrons in the channel of 4H-SiC(0001) MOSFET. Using ESR, we study the origin of the interface carbon defects, and eventually found that they are a c-axial type of the P_bC centers (interfacial carbon dangling bonds) or a similar type of such dangling-bond centers.