[20a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

[20a-141-9] Electrically detected magnetic resonance study on a carbon dangling bond at (000-1)4H-SiC/SiO₂ interface

〇Yohei Kagoyama¹, Mitsuru Sometani², Shinsuke Harada², Tetsuo Hatakeyama², Takahide Umeda¹ (1.Tsukuba Univ., 2.AIST)

Keywords:4H-SiC, MOS interface, Electron Spin Resonance

We prepared n-channel 4H-SiC C-face MOSFET with oxide film grown in wet ambient and annealed in N₂ for metal sintering anneal. Such anneal in the ambient which did not include H₂ degraded the electrical performance of the MOSFET. We performed electrically detected magnetic resonance on this MOSFET. We obtained several signals. One of them was a signal from a carbon danglingbond. However, its origin is not identical to P_bC center which is reported as a carbon dangling bond at 4H-SiC/SiO₂ interface.