[21a-211B-1~9] 4.2 Photonics Devices, Photonic Integrated Circuit and Silicon Phonics

▲ [21a-211B-5] Detectivity Evaluation in SiGeSn/GeSn Multiple Quantum Well Photodetector

Prakash Pareek¹、〇(D)Nishit Malviya²、Vikram Palodiya³、Jitendra K Mishra⁴ (1.Vaagdevi Eng. Colg.、2.IIT (ISM)、3.Sreenidhi Ins. ScT.、4.BIT Mesra)

キーワード：GeSn, Quantum Well, Photodetector

In this work, detectivity of tin incorporated Group IV alloy based multiple quantum well photodetctor is evaluated. The detectivity is also studied under variation of number of quantum wells. The detectivity is evaluated considering the the inter well charge transfer mechanism in themultiple quantum well structure. The result shows that a significant detectivity can be obtained for a particluar number of quantum well.