[21a-221A-1~8] 9.3 Nanoelectronics

△ [21a-221A-5] Fabrication and Characterization of Double-Gate Fe-MgF₂
Single-Electron Transistor

〇Takayuki Gyakushi¹, Yuki Asai¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.IST. Hokkaido Univ)

Keywords:single-electron transistor, granular film, nanogap

Single-electron transistors (SETs) that have nanometer scale dots have been attracted their very low-power nature with high functionality. One of the advantages of SETs is that they can inherently have many gate electrodes. We have developed a simple and easy method to make self-assembling metal nanodot arrays by the use of a single-layer granular thin films in which single layer of Fe nanodots array is dispersed in the MgF₂ insulating matrix. In this paper, a double-gate structure(Si substrate is used as a back-gate) achieved by attaching an additional metal top-gate to the Fe nanodot array is investigated. The devices provided stable oscillatory current characteristics for each gate voltages and showed complicated oscillations that suggest in homogeneous gate-capacitances between the two gates.
Double-gate SETs of the single-layer Fe-MgF₂ granular thin films were successfully fabricated. Clear Coulomb oscillations could be observed by top-gate and back-gate voltages sweeps. Interesting effect that the two gates affects the nanodots unevenly which may be useful to achieve higher functionality