The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[21a-222-1~11] 6.3 Oxide electronics

Fri. Sep 21, 2018 9:00 AM - 12:00 PM 222 (222)

Hideyuki Okumura(Kyoto Univ.), Hiroshi Sakama(Sophia Univ.)

9:15 AM - 9:30 AM

[21a-222-2] Observation of Giant Isotope Effects Induced by Deuterium Ion beam Irradiation of Zinc Oxide Thin Films

Ryo Nakayama1, Mitsuhiko Maesato2, Makoto Arita3, Hiroshi Nakanishi4,5, Hiroshi Kitagawa2 (1.Tokyo Tech., 2.Kyoto Univ., 3.Kyushu Univ., 4.Nat. Inst. Tech., Akashi College, 5.Oska Univ.)

Keywords:zinc oxide, hydrogen, thin film

Hydrogen introduction is a powerful method to control physical properties of materials. However, conventional methods are available to a few materials and need very long time to introduce much hydrogen. Now we focus on hydrogen ion beam irradiation as an efficient way of hydrogen introduction. In this study, we investigated isotope effects on ZnO thin films irradiated with hydrogen or deuterium ion beam using in situ conductivity measurement.