Atomic Layer Deposition of Gallium Oxide Thin Films Using a New Precursor &ldquo;GaCp*&rdquo;

Fumikazu Mizutani; Higashi Shintaro; Inoue Mari; Nabatame Toshihide

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[21a-222-1~11] 6.3 Oxide electronics

Fri. Sep 21, 2018 9:00 AM - 12:00 PM 222 (222)

Hideyuki Okumura(Kyoto Univ.), Hiroshi Sakama(Sophia Univ.)

11:00 AM - 11:15 AM

[21a-222-8] Atomic Layer Deposition of Gallium Oxide Thin Films Using a New Precursor “GaCp*”

〇Fumikazu Mizutani¹, Higashi Shintaro¹, Inoue Mari², Nabatame Toshihide² (1.Kojundo Chem. Lab., 2.NIMS)

Keywords:Atomic Layer Deposition, Gallium Oxide

A new precursor, GaCp* (Pentamethylcyclopentadienylgallium), was synthesized for the ALD of high purity gallium oxide thin films. It was proved that ALD is possible using the precursor.