[21a-233-1~12] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[21a-233-2] Method for increasing the growth rate of silicon thin film by SiH₂Cl₂-SiH_x-H₂ system

〇Mitsuko Muroi¹, Ayami Yamada¹, Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

Keywords:Si epitaxial growth, Growth rate, Reaction mechanism

Along with power saving, demand for silicon (Si) epitaxial thin films used in solar cells and the like is increasing. In order to increase the production amount, it is desired to increase the film formation rate. At that time, increasing the concentration of dichlorosilane (SiH₂Cl₂, DCS) as a raw material has a problem that the film forming rate is saturated due to the Langmuir type surface reaction mechanism. In order to solve this problem, we investigate the increase of the film deposition rate by mixing SiH_x gas to the DCS gas which is the main material.