The 79th JSAP Autumn Meeting, 2018

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13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[21a-233-1~12] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Fri. Sep 21, 2018 9:00 AM - 12:00 PM 233 (233)

Takashi Noguchi(Univ. of the Ryukyus), Taizoh Sadoh(Kyushu Univ.)

9:30 AM - 9:45 AM

[21a-233-3] Development of SiCxNyOz thin film formation at room temperature by PECVD

〇Toru Watanabe1, Mai Hong Minh1, Hitoshi Habuka1 (1.Yokohama Nat. Univ.)

Keywords:SiCNO, Controling composition, Controling film thickness

The plasma enhanced CVD method for forming the SiCNO thin film was developed without heating assistance. Particularly, controling the film thickness and the composition will be discussed.