The 79th JSAP Autumn Meeting, 2018

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13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[21a-233-1~12] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Fri. Sep 21, 2018 9:00 AM - 12:00 PM 233 (233)

Takashi Noguchi(Univ. of the Ryukyus), Taizoh Sadoh(Kyushu Univ.)

9:45 AM - 10:00 AM

[21a-233-4] Measurement of Thermo-Optic Coefficient of Silicon and Improvement of Noncontact Measurement of Si Wafer Surface Temperature

〇Asaki Kameda1, Hiroaki Hanafusa1, Seiichiro Higashi1 (1.Graduate School of Advanced Sciences of Matter, Hiroshima Univ.)

Keywords:temperature measurement, thermo-optic coefficient, semiconductor

これまでに我々は,熱プラズマジェット(TPJ)照射によるミリ秒急速熱処理において石英およびシリコンウェハの昇降温特性を非接触測定する技術について報告してきた. 本研究ではシリコンの熱光学係数(Thermo-Optic Coefficient : TOC)を室温から800 K以上まで測定し,光学解析に用いることで温度測定の精度向上を試みた.