[21a-233-1~12] 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

▲ [21a-233-6] Formation of nanocrystalline silicon on insulator through aluminothermic reduction of silica-substrates

〇Muhammad Monirul Islam¹、Junji Sawahata²、Katsuhiro Akimoto¹、Takeaki Sakurai¹ (1.Tsukuba Univ.、2.Ibaraki Tech.College)

キーワード：aluminothermic reduction, nanocrystalline silicon, SOI

In this study, we have focused on a simple method for the formation nanocrystalline Si (nc-Si) films on insulator-type substrates (i.e., silica: glass or quartz etc) through aluminothermic reduction of the substrates.Si-films were characterized by Raman spectroscopy, photoluminescence, scanning electron microscopy (SEM), and optical measurement etc. A broadened asymmetric peak at ~514 cm^-1 in Raman spectroscopy roughly suggests formation of nc-Si through aluminothermic reduction of the silica (SiO₂)-substrates. Optical band-gap (E_g), of the nc-Si films was experimentally found around 2.5 eV, which is characteristic for the nc-Si thin-films.