[21a-CE-1~10] 13.5 Semiconductor devices and related technologies

[21a-CE-3] Influences of channel thickness fluctuation on electrical properties of bilayer tunneling field effect transistors

〇Kimihiko Kato¹, Hiroaki Matsui¹, Hitoshi Tabata¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

Keywords:tunnel FET, bilayer, thickness fluctuation

We are proposing bilayer tunneling field effect transistors (TFET) by utilizing oxide semiconductor and group-IV semiconductor for ultra-low power switching devices. In this study, we have investigated influences of the channel thickness fluctuation on electrical performances of the proposed bilayer TFET based on TCAD simulation. It is clarified that improvement of the channel thickness uniformity and EOT scaling are effective to improve the sub-threshold performance of bilayer TFETs.