Planar-type InGaAs TFET with sub-60mV/dec S.S. by gate stack engineering of ZrO2

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

Fri. Sep 21, 2018 9:00 AM - 11:30 AM CE (Century Hall)

9:45 AM - 10:00 AM

〇(DC)DAEHWAN AHN¹, Sang-Hee Yoon¹, Kimihiko Kato¹, Taichiro Fukui¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Tokyo Univ.)

Keywords:InGaAs, TFET, ZrO2