The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

[21a-CE-1~10] 13.5 Semiconductor devices and related technologies

Fri. Sep 21, 2018 9:00 AM - 11:30 AM CE (Century Hall)

Hiroyuki Ota(AIST)

10:30 AM - 10:45 AM

[21a-CE-7] Steep Subthreshold Slope in Ferroelectric FET by Transient Negative Capacitance Effect with Polarization Switching Delay

〇(D)Chengji Jin1, Takuya Saraya1, Toshiro Hiramoto1, Masaharu Kobayashi1 (1.IIS, Univ. of Tokyo)

Keywords:Negative capacitance, FeFET, Steep slope

Transient behavior of FeFET is simulated based on time-delayed Preisach model calibrated by transient measurement of ferroelectric HfO2. Transient NC effect caused by polarization switching delay results in sub-60 mV/dec SS with practical material, device and measurement parameters. The model provides a reasonable interpretation to the previously reported steep SS in NCFET.