[21a-PA2-1~28] 12.1 Fabrications and Structure Controls

[21a-PA2-19] Fabrication of IGZO Step-edged Vertical Channel Field-Effect Transistor and Antenna by Low Temperature Ultra Sonic Method for Low Cost Flexible RFID Tag Application

〇Yuki Sato¹, Wataru Kakuta¹, Hiroshi Yamauchi¹, Yugo Okada², Masatoshi Sakai¹, Masaaki Iizuka³, Kazuhiro Kudo¹ (1.Graduate School of Science and Engineering, Chiba Univ., 2.Center for Frontier Science, Chiba Univ., 3.Faculty of Education, Chiba Univ.)

Keywords:RFID

In this study, Field Effect Transistor (FET) and antenna for flexible information tag are fabricated on film. Utilizing thermal nanoimprint lithography technology, a vertical type FET (SVC-FET) using a step-edge structure was fabricated. For the active layer, IGZO was fabricated by RF sputtering method and coating method because it can be formed at low temperature. The antenna uses a low cost copper ink as compared with silver and can be sintered at a low temperature of 200 ° C or less by ultrasonic method.