The 79th JSAP Autumn Meeting, 2018

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13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[21p-135-1~16] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Sep 21, 2018 1:00 PM - 5:15 PM 135 (135)

Tomo Ueno(TUAT), Koichiro Saga(Sony)

1:45 PM - 2:00 PM

[21p-135-4] Substrate orientation dependence of Si surface atomically-flattening by annealing in Ar/H2 ambient

〇Yusuke Horiuchi1, Sohya Kudoh1, Shun-ichiro Ohmi1 (1.Tokyo Tech)

Keywords:surface, atomically flattening, substrate orientation

This paper investigated substrate orientation dependence of Si surface atomically-flattening by annealing in Ar/H2 ambient used in Si(100) flattening reported before. Atomic step was observed not only for Si(100) but Si(111) by annealing at 1050oC/10 min in Ar/4%H2. The leakage current density of Al/SiO2/Si MOS diodes was found to be markedly decreased one order of magnitude by the Si surface flattening.