[21p-145-1~14] 13.3 絶縁膜技術

▲ [21p-145-7] How Ge atoms behave in thermal oxidation of SiGe?

〇(P)Xiuyan Li¹、Yusuke Noma¹、Woojin Song¹、Tomonori Nishimura¹、Akira Toriumi¹ (1.Univ. of Tokyo)

キーワード：SiGe oxidation

A slight and selective Si oxidation of SiGe, achieved by depositing and annealing a YSiO_x film on it, has been proposed to improve dielectric/SiGe interface quality. How Ge behaves in this process remains unclarified, which is a key to further improvement of SiGe gate stacks. This work discusses this issue by paying attention to Ge movement at SiGe interface based on TEM, SIMS, Raman and TDS measurements.