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[21p-146-2] Mechanism on the annihilation of the V-shaped pit in GaN (0001) grown by HVPE
Keywords:HVPE, pit, 3PPL
We investigated the transition of the angle forming facets for a V-shaped pit when the growth proceeded using a three-photon excitation photoluminescence (3PPL). Furthermore, the planar growth on semipolar planes forming facets and c-plane was carried out with changing the carrier gas consisting of H2 and N2 in order to determine growth rates of each plane. Lastly, the mechanism for the V-shaped pit annihilation was discussed.