Lattice distrotion analysis in the depth direction of a modified Na-flux GaN bulk single crystal using nanobeam X-ray diffraction

Kazuki Shida; Nozomi Yamamoto; Tetsuya Tohei; Masayuki Imanishi; Yusuke Mori; Kazushi Sumitani; Yasuhiko Imai; Shigeru Kimura; Akira Sakai

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21p-146-1~17] 15.4 III-V-group nitride crystals

Fri. Sep 21, 2018 1:30 PM - 6:00 PM 146 (Reception Hall)

Tsutomu Araki(Ritsumeikan Univ.), Narihito Okada(Yamaguchi Univ.)

3:00 PM - 3:15 PM

△ [21p-146-7] Lattice distrotion analysis in the depth direction of a modified Na-flux GaN bulk single crystal using nanobeam X-ray diffraction

〇Kazuki Shida¹, Nozomi Yamamoto¹, Tetsuya Tohei¹, Masayuki Imanishi², Yusuke Mori², Kazushi Sumitani³, Yasuhiko Imai³, Shigeru Kimura³, Akira Sakai¹ (1.Grad.Sch. Eng. Sci., Osaka Univ., 2.Grad. Sch. Eng., Osaka Univ., 3.JASRI)

Keywords:GaN, nanobeam X-ray diffraction, Na flux growth