[21p-224B-1~8] 2.2 Detection systems

[21p-224B-4] Development of Event-Driven type of X-ray CMOS-SOI Pixel Sensors

〇Takeshi Tsuru¹, Soudai Harada¹, Tomoyuki Okuno¹, Takaaki Tanaka¹, Hiroyuki Uchida¹, Ayaki Takeda², Koji Mori², Takayoshi Kohmura³, Shoji Kawahito⁴, Yasuo Arai⁵, Ikuo Kurachi⁵ (1.Kyoto Univ., 2.Univ. of Miyazaki, 3.Tokyo U of Science, 4.Shizuoka Univ., 5.KEK)

Keywords:X-ray Imaging Spectrometer, Semiconductor Detector, SOI Pixel Sensor

The measurement efficiency of X-ray photon counting using CCD or CMOS APS is low and time resolution is low because it requirers us to read all the pixels no matter whether X-rays are actually detected or not. Thus, we are developing a X-ray CMOS-SOI pixel sensor having a threshold circuit in each pixel. It allows us to read out triggered pixels only. We have realized a backside illuminated sensor with time resolution of ~1 µsec, a energy resolution of ~200 eV (FWHM) for 6 keV X-ray, and a pixel size of 36 µm.