[21p-232-1~18] 6.2 Carbon-based thin films

△ [21p-232-10] 3.8 W/mm Output Power Density at 1 GHz by 2DHG Diamond MOSFETs

〇(B)Ken Kudara¹, Shoichiro Imanishi¹, Nobutaka Oi¹, Satoshi Okubo¹, Kiyotaka Horikawa¹, Taisuke Kageura¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Waseda ZAIKEN)

Keywords:diamond, high-frequency, Field Effect Transistor

Semiconductor diamond has excellent material properties, such as high breakdown field, high saturated velocity and high thermal conductivity. Therefore, diamond is a promising semiconductor, particularly as high-frequency and high-power devices. In previous research, although the power performance of conventional high frequency diamond FETs is higher than that of GaAs FETs and LDMOS, it has been generally valuated as low as 20 V because of low breakdown voltage. In this work, we fabricated ALD-Al2O3 2DHG diamond MOSFETs with excellent breakdown voltage and evaluated small signal and large signal performance at high voltage (30 V ≤ |VDS| ≤ 80 V). As a result, the highest output power density 3.8 W/mm is obtained in diamond FETs.