Hydrogen Terminated Diamond Interface Properties of Overlapping Gate MOSFET S imolation Using Non-charge Surface Model with Al<sub>2</sub>O<sub>3</sub>

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

Fri. Sep 21, 2018 1:15 PM - 6:00 PM 232 (232)

Norio Tokuda(Kanazawa Univ.), Mariko Suzuki(CORNES Technologies Ltd.), Daisuke Takeuchi(AIST), Hisao Miyazaki(Toshiba)

4:15 PM - 4:30 PM

〇REEM MOHAMMED ALHASANI¹, Taichi Yabe¹, Hiroshi Kawarada¹ (1.Waseda University)

Keywords:Diamond, MOSFET, Overlapping Gate