[21p-232-1~18] 6.2 Carbon-based thin films

[21p-232-6] Band-alignment analysis of diamond-Al₂O₃ interface

〇Hisao Miyazaki¹, Tadashi Sakai¹, Shigeya Kimura¹, Tsubasa Matsumoto^2,3, Masatsugu Nagai², Norio Tokuda^2,3, Hiromitsu Kato³, Yukako Kato³, Masahiko Ogura³, Toshiharu Makino³, Satoshi Yamasaki³ (1.Toshiba R&D Center, 2.Kanazawa Univ., 3.AIST)

Keywords:diamond, MOSFET, band alignment

Band alignment analysis of Diamond-Al₂O₃ interface were performed as the first step toward a better understanding of physics of semiconductor-insulator interface in diamond MOSFETs. We deposited Al₂O₃ layer by ALD on O- and OH- terminated diamond (111) surfaces. The band offset between Al₂O₃ and diamond were obtained by XPS. The band offset correlates with the electron affinity of undeposited surface. If the ALD process were ideal, the correlation would be different, because hydrogen atoms are replaced by aluminum atoms in the ideal ALD process on OH-terminated surfaces. Further study on surface treatment and ALD process are required.