[21p-232-1~18] 6.2 Carbon-based thin films

△ [21p-232-8] Impurity Concentration Dependence of Field Effect Mobility in Diamond MOSFET

〇Tsubasa Matsumoto¹, Hiromitsu Kato², Toshiharu Makino², Masahiko Ogura², Daisuke Takeuchi², Takao Inokuma¹, Satoshi Yamasaki^1,2, Norio Tokuda^1,2 (1.Kanazawa Univ., 2.AIST)

Keywords:diamond, MOS, mobility

The inversion channel MOSFETs that essentially show normally off characteristics are widely used because of their high carrier density in inversion channel and high reliability. Especially, the MOSFETs using wide-bandgap semiconductors are expected as low-loss and high-power electronic devices. Although we have fabricated the first inversion channel diamond MOSFETs with phosphorus-doped n-type body, its low drain current density (~1.6 mA/mm) is the critical issue. In this study, to confirm the effects of phosphorus concentration in the body on the electrical properties, especially a field effect mobility µ_FE for the diamond MOSFETs by a lightly phosphorus doped body. As a result, the µ_FE was increased to 20 cm²/Vs from 10 of the diamond MOSFETs using the body with phosphorus concentration of less than 10¹⁶ cm^-3.