The 79th JSAP Autumn Meeting, 2018

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Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[21p-331-1~8] 13.7 Compound and power electron devices and process technology

Fri. Sep 21, 2018 1:45 PM - 4:00 PM 331 (International Conference Room)

Toshiharu Kubo(Nagoya Inst. of Tech.)

2:30 PM - 2:45 PM

[21p-331-4] Rectification Properties of α-Ir2O3/α-Ga2O3 pn junction diodes

〇Kentaro Kaneko1, Shu Takemoto1, Shin-ichi Kan1, Isao Takahashi2, Masahiro Sugimoto2, Takashi Shinohe2, Shizuo Fujita1 (1.Kyoto Univ., 2.FLOSFIA Inc.)

Keywords:Ga2O3, power device, Corundum