[21p-331-1~8] 13.7 Compound and power electron devices and process technology

[21p-331-5] Fabrication of Field-Effect Transistors on Diamond Substrate Bonded to Si

〇Jianbo Liang¹, Satoshi Masuya², Daiki Fujii³, Seong-woo Kim³, Makoto Kasu², Naoteru Shigekawa¹ (1.Osaka City Univ., 2.Saga Univ., 3.Adamant Namiki Co., Ltd.)

Keywords:diamond, surface activated bonding, Diamond/Si directly bonding