[21p-331-1~8] 13.7 Compound and power electron devices and process technology

[21p-331-8] Fundamental study on reducing on-resistance by introducing strain into silicon vertical power device

〇Takeya Inoue¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutui¹ (1.Tokyo Tech)

Keywords:silicon vertical power device, Piezoresistive effect