[21p-431B-1~7] 15.2 II-VI and related compounds

[21p-431B-3] Deposition and characterization of ZnS window layers prepared by MOCVD in the air

〇Tamotsu Okamoto¹, Takahiro Fukui¹, Shota Okamoto¹, Moemi Taki¹, Naoki Aso¹, Tomoya Igari¹, Seto Satoru² (1.NIT, Kisarazu Col., 2.NIT, Ishikawa)

Keywords:ZnS, II-VI compounds, window layer

We proposed a compact image sensor that uses a combination of a matrix-driven Spindt-type field emitter array (FEA) and a CdTe-based photoconducting film. In the conventional CdTe-based photoconducting films, CdS window layer was used. However, photosensitivity with the wavelength lower than 500 nm decreased in the CdS/CdTe photoconducting films. In this work, we prepared the ZnS window layers with wider bandgap than that of the conventional CdS window layer by means of MOCVD in the air.