[21p-431B-1~7] 15.2 II-VI and related compounds

[21p-431B-6] Development of organic-inorganic hybrid structure ZnSe based ultraviolet integrated APD
~Optimization of window layer forming process~

〇Yuki Ichikawa¹, Keita Tanaka¹, Yuta Fujii¹, Takuro Kawahara¹, Kazuki Nakagawa¹, Kentaro Yoshida¹, Tomoki Abe¹, Hirohumi Kasada¹, Koshi Ando¹, Kunio Ichino¹, Kazuaki Akaiwa¹ (1.Tottori Univ.)

Keywords:ZnSe based ultraviolet avalanche photodiode, organic-inorganic hybrid structure

We have developed ZnSe based ultraviolet (UV) avalanche photodiodes (APDs) using an organic-inorganic hybrid structure with a PEDOT:PSS window layer. In order to obtain an APD device uniformity, we tried to optimize photolithography process for a window layer formation.