Oral presentation

[21p-431B-1~7] 15.2 II-VI and related compounds

Fri. Sep 21, 2018 1:45 PM - 3:30 PM 431B (431-2)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[21p-431B-1] Fabrication and characterization of Cu₂ZnSnSe₄ thin films by selenization using SnSe.

〇Shunichi Tsuji¹, Ryouya Miyahara¹, Yusuke Kato¹, Tooru Tanaka¹, Katsuhiko Saito¹, Qixin Guo¹ (1.Saga Univ.)

2:00 PM - 2:15 PM

[21p-431B-2] Characterization of Cl-doped ZnCdTeO thin films by molecular beam epitaxy

〇Yusuke Watanabe¹, Kento Matsuo¹, Tooru Tanaka¹, Katsuhiko Saito¹, Qixin Guo¹ (1.Saga Univ.)

2:15 PM - 2:30 PM

[21p-431B-3] Deposition and characterization of ZnS window layers prepared by MOCVD in the air

〇Tamotsu Okamoto¹, Takahiro Fukui¹, Shota Okamoto¹, Moemi Taki¹, Naoki Aso¹, Tomoya Igari¹, Seto Satoru² (1.NIT, Kisarazu Col., 2.NIT, Ishikawa)

2:30 PM - 2:45 PM

[21p-431B-4] Study of MOVPE growth to improve thickness uniformity of CdTe epilayers on Si substrate

〇Ryoya Tamura¹, Takuro Mori¹, Ryo Torii¹, Yuuki Higashira¹ (1.NIT)

2:45 PM - 3:00 PM

[21p-431B-5] MBE Growth and Characterization of ZnMgSTe

〇Tatsuya Nakashima¹, Takumi Yumoto¹, Kyoma Sahashi¹, Yusuke Tomita¹, Kazuaki Akaiwa¹, Tomoki Abe¹, Kunio Ichino¹ (1.Tottori Univ.)

3:00 PM - 3:15 PM

[21p-431B-6] Development of organic-inorganic hybrid structure ZnSe based ultraviolet integrated APD
~Optimization of window layer forming process~

〇Yuki Ichikawa¹, Keita Tanaka¹, Yuta Fujii¹, Takuro Kawahara¹, Kazuki Nakagawa¹, Kentaro Yoshida¹, Tomoki Abe¹, Hirohumi Kasada¹, Koshi Ando¹, Kunio Ichino¹, Kazuaki Akaiwa¹ (1.Tottori Univ.)

3:15 PM - 3:30 PM

[21p-431B-7] Electrical characteristic analysis of the n-side structure of II-VI compound semiconductor optical devices on InP substrate

〇Hodaka Kobayashi¹, Kenta Ishii¹, Keiji Maeda¹, Ichirou Nomura¹ (1.Sophia Univ.)

Sessions

15 Crystal Engineering » 15.2 II-VI and related compounds

[21p-431B-1~7] 15.2 II-VI and related compounds

[21p-431B-1] Fabrication and characterization of Cu₂ZnSnSe₄ thin films by selenization using SnSe.

[21p-431B-2] Characterization of Cl-doped ZnCdTeO thin films by molecular beam epitaxy

[21p-431B-3] Deposition and characterization of ZnS window layers prepared by MOCVD in the air

[21p-431B-4] Study of MOVPE growth to improve thickness uniformity of CdTe epilayers on Si substrate

[21p-431B-5] MBE Growth and Characterization of ZnMgSTe

[21p-431B-6] Development of organic-inorganic hybrid structure ZnSe based ultraviolet integrated APD
~Optimization of window layer forming process~

[21p-431B-7] Electrical characteristic analysis of the n-side structure of II-VI compound semiconductor optical devices on InP substrate

Authentication

Sessions

15 Crystal Engineering » 15.2 II-VI and related compounds

[21p-431B-1~7] 15.2 II-VI and related compounds

[21p-431B-1] Fabrication and characterization of Cu2ZnSnSe4 thin films by selenization using SnSe.

[21p-431B-2] Characterization of Cl-doped ZnCdTeO thin films by molecular beam epitaxy

[21p-431B-3] Deposition and characterization of ZnS window layers prepared by MOCVD in the air

[21p-431B-4] Study of MOVPE growth to improve thickness uniformity of CdTe epilayers on Si substrate

[21p-431B-5] MBE Growth and Characterization of ZnMgSTe

[21p-431B-6] Development of organic-inorganic hybrid structure ZnSe based ultraviolet integrated APD~Optimization of window layer forming process~

[21p-431B-7] Electrical characteristic analysis of the n-side structure of II-VI compound semiconductor optical devices on InP substrate

Authentication

[21p-431B-1] Fabrication and characterization of Cu₂ZnSnSe₄ thin films by selenization using SnSe.

[21p-431B-6] Development of organic-inorganic hybrid structure ZnSe based ultraviolet integrated APD
~Optimization of window layer forming process~