[21p-PB1-1~18] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[21p-PB1-1] Short gap RF-magnetron sputtering deposition of Ga-doped ZnO film on glass substrate with buffer layer

〇Yoshinobu Matsuda¹, Naoki Matsuo¹, Masaki Ishiba¹, Tomohiro Furusato¹, Takahiko Yamashita¹ (1.Nagasaki Univ.)

Keywords:Galium doped zinc oxide, magnetron sputtering, buffer layer

In sputter-deposition of a ZnO based material, the carrier density and mobility decrease on the substrate facing the target eroded region. In the short gap sputtering deposition with a Ga-doped ZnO (GZO) target, the film resistivity decreased, and the uniformity of the spatial distribution was improved as the gap length decreased. To further improve the resistivity and its spatial uniformity, a buffer layer was employed. After formation of an amorphous GZO: N film at an operating pressure of 0.35 Pa using an Ar nitrogen mixed gas, solid phase crystallization was done by high-temperature annealing in the air to form a crystallized buffer layer. A GZO film was formed thereon at an operating pressure of 1 Pa, an RF power of 200 W, and a film deposition time of 900 seconds. As a result, it was possible to reduce the resistivity at the substrate area facing the target eroded region to the order of 10^-4 ohmcm for the whole substrate.