[21p-PB6-1~10] 15.6 Group IV Compound Semiconductors (SiC)

[21p-PB6-4] A study of distribution of residual stress on n-type 4H-SiC in contact with an electrode by micro-Raman imaging and ab-initio calculations

〇Jun Suda¹, Satoshi Suwa¹, Kouki Togo¹, Shugo Mizuno¹ (1.Chukyo Univ.)

Keywords:4H-SiC, Raman imaging, residual stress

As an ideal material for high power devices, properties of n-type 4H-SiC single crystals at different temperatures, especially at high temperatures, are significant to its practical applications. Furthermore, using n-type 4H-SiC SiC as MOS-FET for high-power inverter in higher temperatures than 200℃, the difference of values in thermal expansion coefficient between an electrode contact and the surface of SiC crystal would lead to peeling of an electrode and a crack on the electrode contact interface. In this study, we perform 3D-Raman imaging measurements on n-type 4H-SiC single crystals in contact with an electrode in high temperatures and discuss relative distribution of residual stress in 4H-SiC in contact with an electrode by using the vibrational pattern of E₂ mode by ab-initio calculations.