Rinya Nishihata

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Speaker, Author, Co-Author

Mon. Mar 19, 2018 1:30 PM - 6:00 PM D103 (56-103)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[19p-D103-1~17] 15.6 Group IV Compound Semiconductors (SiC)

5:30 PM - 5:45 PM

[19p-D103-16] Comparison of Activation Energies of Hall Coefficient and Resistivity in Heavily Al-doped 4H-SiC

〇Rinya Nishihata¹, Akinobu Takeshita¹, Tatsuya Imamura¹, Kota Takano¹, Kazuya Okuda¹, Atsuki Hidaka¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.OECU, 2.AIST)

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