Tomoyoshi Mishima

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Speaker, Author, Co-Author

Sun. Mar 18, 2018 9:00 AM - 12:15 PM C302 (52-302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18a-C302-1~12] 13.7 Compound and power electron devices and process technology

10:15 AM - 10:30 AM

[18a-C302-6] GaN p-n Diodes with High Breakdown Capability

Hiroshi Ohta¹, Kentaro Hayashi¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², 〇Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)