2:15 PM - 2:30 PM [20p-F214-4] Low-Temperature Formation of n-Type Ge/Insulator by Sb-Induced Layer Exchange Crystallization: Effect of Ge Thin Under-Layer Insertion 〇(M1)Hongmiao Gao1, Masanobu Miyao1, Taizoh Sadoh1 (1.Kyushu Univ.)