Ryunosuke Higashi

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Speaker, Author, Co-Author

Sun. Mar 18, 2018 9:00 AM - 12:15 PM E201 (57-201)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-E201-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:45 AM - 12:00 PM

[18a-E201-10] High mobility and highly reliable thin-film transistor with InGaZnOx-hetero-channel

〇(M1)Ryunosuke Higashi¹, Hirosato Tanaka¹, Seiichiro Takahashi³, Isamu Yashima³, Mamoru Furuta^1,2 (1.Kochi Univ. of Technology, 2.Center for Nanotechnology, Research Institute, Kochi Univ. of Technology, 3.Mitsui Mining & Smelting Co.,LTD)

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