Takashi Hamaguchi

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Speaker, Author, Co-Author

Sat. Mar 17, 2018 9:00 AM - 12:30 PM F206 (61-206)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[17a-F206-1~13] 13.3 Insulator technology

11:15 AM - 11:30 AM

△ [17a-F206-9] Difference of temperature dependent V_FB shift caused by interface dipole at Al₂O₃/SiO₂, MgO/SiO₂ and MgO/Al₂O₃

〇Takashi Hamaguchi¹, Koji Kita¹ (1.The Univ. of Tokyo)