Tomoyoshi Mishima

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Speaker, Author, Co-Author

Sat. Mar 17, 2018 1:15 PM - 4:20 PM E201 (57-201)

Symposium (Oral)
| Symposium
| Progress of compound semiconductor device technologies: what can learn from history of GaAs device development

[17p-E201-1~7] Progress of compound semiconductor device technologies: what can learn from history of GaAs device development

1:20 PM - 1:50 PM

[17p-E201-2] High Purity MBE-Grown AlGaAs/InGaAs Connecting to Development and Production of Epitaxial Wafers for Electron Devices

〇Tomoyoshi Mishima¹ (1.Hosei Univ.)