Takuya Nakahara

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Speaker, Author, Co-Author

Sat. Mar 17, 2018 1:15 PM - 6:30 PM E202 (57-202)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[17p-E202-1~19] 15.4 III-V-group nitride crystals

3:15 PM - 3:30 PM

△ [17p-E202-8] Effect of content and thickness of AlGaN interlayer on strain of GaN on Si substrate

〇Takuya Nakahara¹, Momoko Deura¹, Takeshi Momose¹, Yoshiaki Nakano¹, Masakazu Sugiyama², Yukihiro Shimogaki¹ (1.Univ. of Tokyo, 2.RCAST, Univ. of Tokyo)

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