Yusuke Noma

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Speaker, Author, Co-Author

Sat. Mar 17, 2018 1:45 PM - 6:15 PM F206 (61-206)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[17p-F206-1~17] 13.3 Insulator technology

2:45 PM - 3:00 PM

[17p-F206-5] Mechanism of Ge precipitation at oxide/SiGe interface after thermal oxidation

〇Yusuke Noma¹, Woojin Song¹, Tomonori Nishimura¹, Takeaki Yajima¹, Akira Toriumi¹ (1.The Univ. of Tokyo)