Hitohisa Furusho

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Speaker, Author, Co-Author

Sat. Mar 17, 2018 1:45 PM - 6:15 PM F206 (61-206)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[17p-F206-1~17] 13.3 Insulator technology

3:30 PM - 3:45 PM

[17p-F206-8] Improvement of interface properties of crystalline Lu-doped La₂O₃/La₂O₃/Ge(111) MIS structures by wet treatments

〇Hitohisa Furusho¹, Kyoichi Takayama¹, Keisuke Yamamoto², Hiroshi Nakashima³, Hiroshi Nohira⁴, Takeshi Kanashima¹ (1.Osaka Univ., 2.IGSES, Kyushu Univ., 3.GIC, Kyushu Univ., 4.Tokyo City Univ.)